Semiconductor device

ABSTRACT

A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.14/166,085, filed Jan. 28, 2014, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device for use in anoptical application and a method for fabricating the device.

2. Description of the Related Art

In order to meet the requirements of future computing systems, higherspeed and more energy efficient alternatives to electricalinterconnects, such as on-chip optical interconnects and chip-to-chipoptical interconnects, will be needed. Integrated optics, particularlysilicon photonics, can suitably meet such needs. For the cost-effective,mass-fabrication of CMOS-based chips having a performance capabilitysuitable for use in high-speed devices and/or applications, integratedoptical interconnects with compatible light sources are to be provided.A problem in this regard is that, due to the indirect band-gap ofsilicon, no silicon-based light sources are available and/or can beused. This problem has been addressed by the use of III-V basedsemiconductor material systems typically being provided as light sourcesfor use in conjunction with silicon photonics and, more generally,integrated optics based on a silicon platform. However, an associatedproblem in this regard is posed by the lattice mismatch between III-Vcompound semiconductors and silicon, making the direct, monolithicintegration of III-V based light sources on a silicon platformnon-trivial. In previously-proposed approaches for facilitating suchintegration, bonded III-V based light sources or blanket gain materialshave been used. In this regard, it can be time-consuming and challengingto achieve relatively high-precision alignment when bonding apre-processed III-V based light source to a given waveguide structure,particularly since the alignment precision can be further limited by thebonding process. For bonding a blanket III-V material on a pre-processedsilicon-based waveguide, the alignment marks located on the siliconwafer that are provided for the lithography step involved in thepatterning of the III-V layer can be used. Because the alignmentaccuracy of light sources based on compound semiconductor systems, suchas III-V materials, with respect to optical structures, for example,silicon waveguides and/or resonators, can be rather dependent onlithography accuracy, it can be insufficient for certain applications.

Referring to the document titled, “Defect reduction of GaAs epitaxy onSi (001) using selective aspect ratio trapping”, by Li et al. publishedin Appl. Phys. Lett., vol. 91, 021114, 2007, in which III-V epitaxy inoxide trenches on silicon has been reported using aspect ratio trapping.Reference is also made to the document titled, “Monolithic integrationof GaAs/InGaAs lasers on virtual Ge substrates via aspect-ratiotrapping”, by Li et al. published in J. Electrochem. Soc. 156, H574,2009, in which the formation of GaAs/InGaAs quantum well lasers, bymetallorganic chemical vapour deposition, on virtual Ge substrates onsilicon has been demonstrated via aspect ratio trapping and epitaxiallateral overgrowth. These documents are respectively concerned withaddressing other known problems associated with the fabrication ofstructures having compound semiconductor material systems, such as III-Vmaterial systems, on silicon, which can cause performance deteriorationof devices in which such structures are integrated. Such problems arerelated to the lattice mismatch and difference in thermal coefficientsbetween III/V material systems and silicon. However, neither of thesedocuments address the problems, as discussed above, associated with thealignment of compound semiconductor systems that are monolithicallyintegrated and optically coupled with optical structures, for example,waveguides and, more generally, photonic structures.

In the document titled, “Si—InAs heterojunction Esaki tunnel diodes withhigh current densities”, by Bjoerk et al., published in Appl. Phys.Lett., vol. 97, 163501, 2010, III-V nanowire growth on silicon isdiscussed. The problems and/or issues associated with the alignment ofcompound semiconductor systems that are monolithically integrated andoptically coupled with optical components, such as waveguides and/orphotonic structures, are not addressed.

Referring to the documents titled, “Electrically pumped hybridAlGaInAs-silicon evanescent laser”, by Fang et al., published in OpticsExpress, vol. 14, issue 20, pp. 9203-9210, 2006, and “Electricallypumped InP-based microdisk lasers integrated with a nanophotonicsilicon-on-insulator waveguide circuit”, by Van Campenhout et al.,published in Optics Express, vol. 15, issue 11, pp. 6744-6749, 2007.These documents generally disclose the alignment of an active lasingregion towards a waveguide using contact lithography, with an alignmentaccuracy of better than 2 microns being achieved. Turning to thedocument titled, “Metamorphic DBR and tunnel-junction injection: A CW RTmonolithic long-wavelength VCSEL”, by Boucart et al., published in IEEEJ. Sel. Topics Quantum Electron, vol. 5, issue 3, pp. 520-529, 1999,III-V light sources on silicon are described. This document publishesthe fabrication of a long-wavelength, vertical-cavity, surface-emittinglaser (VCSEL), which is monolithically integrated on an indium phosphide(InP) wafer, capable of operating at room temperature, and has atunnelling junction for reduced losses sustained during operation. Thisdocument does not address the issues/problems associated with thealignment of compound semiconductors that are optically coupled tooptical structures such as waveguides, and more particularly those basedon a silicon platform.

In each of the documents titled, “Design and optical characterisation ofphotonic crystal lasers with organic gain material”, published byBaumann et al. in Journal of Optics, vol. 12, 065003, 2010, and “Organicmixed-order photonic crystal lasers with ultrasmall footprint”, byBaumann et al., published in Appl. Phys. Lett., vol. 91, 171108, 2007,spin-coating of an organic gain material onto a two-dimensional photoniccrystal is reported. While suitable for organic gain material,spin-coating is not compatible with respect to solid state gainmaterials, such as III-V material systems. US 2008/0002929 A1 describesan apparatus and a method for electrically pumping a hybrid evanescentlaser. For one example, the apparatus includes an optical waveguidedisposed in silicon. An active semiconductor material is disposed overthe optical waveguide defining an evanescent coupling interface betweenthe optical waveguide and the active semiconductor material such that anoptical mode to be guided by the optical waveguide overlaps both theoptical waveguide and the active semiconductor material. A currentinjection path is defined through the active semiconductor material andat least partially overlapping the optical mode such that light isgenerated in response to electrical pumping of the active semiconductormaterial in response to current injection along the current injectionpath at least partially overlapping the optical mode. In this document,the light generated by the active semiconductor material is evanescentlycoupled to a silicon waveguide that constitutes a passive aspect.Because the active semiconductor material is remotely positioned withrespect to the silicon waveguide, it can be that the position of thegenerated light relative to passive aspect is relatively unchanged.Also, it can be that the overlap of the generated light with the activesemiconductor material is relatively small, and so it can be expectedthat the teaching of the present document is based on a hybrid mode ofoperation, that is, a mainly passive mode with a relatively smalleractive mode. Such a hybrid mode of operation can cause relatively higherthreshold currents and lower optical output levels. Alignment issues cannot be considered in the present document and, indeed are not addressed,since the position of the generated light is determined by the positionof the underlying silicon waveguide. Positioning of the activesemiconductor material relative to the underlying silicon waveguide canbe facilitated by contact lithography with micron-scale precision in thepresent case.

US 2008/0198888 A1 discloses a method for bonding a compoundsemiconductor on a silicon waveguide for attaining a laser above asilicon substrate. This document is concerned with the heterogeneousintegration, rather than the monolithic integration, of a light sourcebased on a compound semiconductor material system with respect to asilicon substrate. Furthermore, such heterogeneous integration isachieved by optical contact-lithography, which has associatedmicron-range alignment tolerances.

US 2009/0245298 A1 discloses a silicon laser integrated device,including: a silicon-on-insulator substrate having at least onewaveguide in a top surface, and a compound semiconductor substratehaving a gain layer, the compound semiconductor substrate beingsubjected to a hybrid integration process, wherein the upper surface ofthe compound semiconductor substrate is bonded to the top surface of thesilicon-on-insulator substrate. This document is concerned with thehybrid/heterogeneous integration, rather than the monolithicintegration, of a surface of a compound semiconductor substrate withrespect to a silicon-on-insulator substrate. Alignment between thecompound semiconductor substrate and the silicon-on-insulator substrateis performed by optical contact-lithography, which has associatedmicron-range alignment tolerances. Based on the index contrasts of thefabricated structures, it can be that the light generated by the lasersource/compound semiconductor aspect is mainly confined in the siliconwith a relatively small proportion being confined within the compoundsemiconductor, which can serve to limit the efficiency of the laser andresult in relatively increased power consumption.

U.S. Pat. No. 5,703,896 discloses an apparatus for emitting varyingcolours of light including: a lasing layer formed of crystalline siliconquantum dots formed in an isolation matrix of hydrogenated silicon; thequantum dots being formed in three patches; each of the three patcheshaving different sized quantum dots therein to produce three differentcolours of light; a barrier layer of p-type semiconductor under thelasing layer, the p-type semiconductor being selected from the groupGaP, SiC, GaN, ZnS; a substrate member under the barrier layer; ann-type semiconductor layer above the lasing layer, the n-typesemiconductor layer being selected from the group GaP, SiC, GaN, ZnS; apositive potential contact beneath the substrate member, three negativepotential contacts; each of the three contacts being above a differentone of the three patches; each of the three contacts acting with thepositive contact to selectively bias a different one of the threepatches; three sectors of concentric grating surrounding the threepatches; each of the sectors having a radial period corresponding to thecolour of light produced by an adjacent one of the three patches; andeach of the sectors resonating photons emitted by the adjacent patch tostimulate coherent light emission. This document is concerned with thefabrication of silicon quantum dots in silicon. It does not address themonolithic integration of a light/laser source based on a compoundsemiconductor such as, a III-V material system, with respect to anoptical structure such as, a photonic structure and/or optical waveguidebased on a silicon platform.

US 2007/0105251 discloses a laser structure including: at least oneactive layer including doped Ge so as to produce light emissions atapproximately 1550 nm from the direct band-gap of Ge; a firstconfinement structure being positioned on a top region of the at leastone active layer; and a second confinement structure being positioned ona bottom region of the at least one active layer. This documentgenerally seems to be concerned with a VCSEL device. It does not seem toaddress the challenges faced in achieving alignment, on a scale ofnanometres, of a light source based on a compound semiconductor materialsystem that is monolithically integrated and optically coupled with anoptical structure such as a waveguide based on a silicon platform.

US 2007/0104441 discloses an integrated photodetector apparatusincluding: (a) a substrate having a first cladding layer disposed over abase layer, the base layer having a first semiconducting material, thefirst cladding layer defining an opening extending to the base layer;(b) an optical waveguide having the first semiconductor material anddisposed over the substrate; and (c) a photodetector having a secondsemiconductor material epitaxially grown over the base layer at least inthe opening, the photodetector having an intrinsic region opticallycoupled to the waveguide, at least a portion of the intrinsic regionextending above the first cladding layer and laterally aligned with thewaveguide. The disclosed fabrication method is in relation to agermanium photodetector that is laterally coupled to a polycrystallinewaveguide and is aligned relative thereto by way of a dedicated,multiple-step alignment procedure. This document does not address how acompound semiconductor based light source can be monolithicallyintegrated and/or aligned, with an alignment tolerance on a scale ofnanometres, with respect to integrated optics based on a siliconplatform.

U.S. Pat. No. 5,259,049 discloses an electro-optical device including: asubstrate; a laser grown on the substrate, and having an active region,an etched mirror, and a laser ridge thereon, wherein the shape of thelaser ridge is transferred to the substrate so as to form a substrateridge, the laser generating a beam; and an optical waveguide coupled tothe mirror, and being deposited on the substrate ridge so as to belaterally aligned by the substrate ridge to the laser ridge, the opticalwaveguide effectively shaping the beam generated by the laser theoptical waveguide including a lower cladding layer grown on top of thesubstrate ridge, a waveguide core disposed on top of the lower claddinglayer, and an upper cladding layer disposed on top of the waveguidecore, wherein the cladding layers and the waveguide core includematerial having refractive indices which match the refractive indices ofthe laser, wherein the upper and lower cladding layers haveapproximately the same refractive indices, and wherein the differencebetween the refractive index of the waveguide core and the refractiveindex of the upper cladding layer is equal to the difference between therefractive indices of the active layer of the laser and the uppercladding layer, respectively. This document discloses a device in whicha pre-fabricated laser is coupled to a waveguide structure. Thewaveguide structure is arranged on top of the laser and is alignedthereto by way of a ridge feature associated with the laser.

U.S. Pat. No. 6,163,639 discloses a process for fitting connectors tooptical elements to an integrated optical circuit consisting ofconnecting at least one optical element to this circuit such that theoutputs and/or inputs of each element are located approximately in thesame plane as the inputs and/or outputs of this circuit, also located inthe same plane, characterised in that it includes the following steps:the circuit is positioned on a template with patterns that enablesubsequent precise alignment of optical elements with inputs and/oroutputs of the circuit, at least one block capable of holding theoptical element(s) is positioned on the template facing the inputsand/or outputs of the circuit and is fixed to this circuit; the templateis removed, and the optical element(s) is (are) placed in each block,the blocks then being aligned with the inputs and/or outputs of thecircuit. This document discloses a passive alignment method for anoptically active photonic circuit towards a waveguide section.Encompassed within the context of passive optical components in thisdocument are waveguides or fibres and not cavities and/or nanophotonicon-chip waveguides. Regarding the passive optical components, they areinserted into dedicated alignment marks provided on the host substrate.The alignment marks are v-grooves etched into the host substrate, whichcan mean that the alignment tolerances are lithography dependent.Generally, this document does not address the monolithic integration ofa light source based on a compound semiconductor material system withrespect to integrated optics based on a silicon platform, and instead isconcerned with providing hybrid integration of bulk photonic componentswith fibres. The described approach can be considered to be analogouswith a packaging method for coupling an active III-V based chip withsilica glass fibres. Alignment tolerances with the described approachcan be insufficient for relatively large index contrast integratedphotonic components.

US 2004/0218648 A1 discloses a laser diode including: a substrate; alower material layer formed on the substrate; a resonance layer formedon the lower material layer, an upper material layer formed on theresonance layer and having a ridge at the top, a buried layer having acontact hole corresponding to the ridge of the upper material layer; aprotective layer formed of a material different from the material of theburied layer, and having an opening corresponding to the contact hole ofthe buried layer; and an upper electrode formed on the protective layerto contact an upper surface of the ridge through the contact hole. Thisdocument discloses a device architecture and fabrication method for alow-leakage laser diode. An alignment process is described which relatesto only the electronic injection part of the laser diode and not inrespect of the material used as light source/laser with respect to thematerial including the integrated optics. It is also not addressed howoptical coupling between the laser and the surrounding opticalmedium/integrated optics can be achieved.

Referring to the document titled, “Hybrid III-V semiconductor/siliconnanolaser”, by Halioua et al., published in Optics Express, vol. 19,9221, 2011, in which an optically pumped one-dimensional photonic cavitylaser is vertically coupled to a pre-structured straight siliconwaveguide. Alignment of the laser with respect to the silicon waveguideis performed by electron-beam lithography using markers formed in thesilicon waveguide, with an overlay accuracy of better than 50 nmpotentially being achieved. Although the <50 nm alignment precision isby far better than what can be achieved with optical contactlithography, it can still not be considered suitable for highquality-factor, low modal-volume micro-resonators, for example.Furthermore, electron-beam lithography is labour intensive,time-consuming, and expensive.

Accordingly, it is a challenge to monolithically integrate an opticallyactive material, having a relatively high non-linearity, optical gain,light emission, with respect to surrounding passive optical/photonicstructures/components, for example, waveguides and cavities. It is alsodesirable that such a task is performed with an alignment tolerance thatis on the scale of nanometres and with the alignment procedure beingconducted without dedicated alignment steps/lithographic processes andso as to be compatible with mass-fabrication.

SUMMARY OF THE INVENTION

According to an embodiment of a first aspect of the present invention,there is provided a semiconductor device for use in an opticalapplication including: an optically passive aspect that is operable in asubstantially optically passive mode, and an optically active materialhaving a material that is operable in a substantially optically activemode, wherein: the optically passive aspect is patterned to include aphotonic structure with a predefined structure, and the optically activematerial is formed in the predefined structure so as to be substantiallyself-aligned in a lateral plane with the optically passive aspect.

According to an embodiment of a second aspect of the present invention,a method for fabricating a semiconductor device for use in an opticalapplication is provided. The method includes: providing an opticallypassive aspect that is operable in a substantially optically passivemode, and providing an optically active material having a material thatis operable in a substantially optically active mode, wherein: theoptically passive aspect is patterned to include a photonic structurewith a predefined structure, and the optically active material is formedin the predefined structure so as to be substantially self-aligned in alateral plane with the optically passive aspect.

BRIEF DESCRIPTION OF THE DRAWINGS

Reference will now be made, by way of example, to the accompanyingdrawings.

FIG. 1 shows a side-view of a semiconductor device, according to anembodiment of the present invention.

FIG. 2 a shows a step of a method for fabricating the semiconductordevice where a photonic structure is formed in an optically passiveaspect, according to an embodiment of the present invention.

FIG. 2 b shows a step of the method for fabricating the semiconductordevice where a lithography step is performed at the location of apredefined structure, according to an embodiment of the presentinvention.

FIG. 2 c shows a step of the method for fabricating the semiconductordevice where an optically active material is selectively grown in thepredefined structure, according to an embodiment of the presentinvention.

FIG. 3 a illustrates a first coupling scheme with a lateral cavityfeature where the cross-section of a silicon waveguide is smaller than acorresponding cross-section of the predefined structure, according to anembodiment of the present invention.

FIG. 3 b illustrates a first coupling scheme with a lateral cavityfeature where a tapered region is provided between the smallercross-section of the silicon waveguide and the predefined structure,according to an embodiment of the present invention.

FIG. 4 a illustrates a second coupling scheme with a lateral cavityfeature where the predefined structure is implemented as a trench andperiodic holes are substantially the same size, according to anembodiment of the present invention.

FIG. 4 b illustrates a second coupling scheme with a lateral cavityfeature where the predefined structure is implemented as a trench andthe periodic holes progressively increase in size, according to anembodiment of the present invention.

FIG. 4 c illustrates a second coupling scheme with a lateral cavityfeature where the predefined structure is implemented as a hole and theperiodic holes are substantially the same size, according to anembodiment of the present invention.

FIG. 4 d illustrates a second coupling scheme with a lateral cavityfeature where the predefined structure is implemented as a hole and theperiodic holes progressively increase in size, according to anembodiment of the present invention.

FIG. 4 e illustrates a second coupling scheme with a lateral cavityfeature where the silicon waveguide has a cross-section that issubstantially the same size as the predefined structure and the periodicholes progressively increase in size, according to an embodiment of thepresent invention.

FIG. 5 illustrates a third coupling scheme with a lateral cavity featurewhere the photonic structure includes a two-dimensional photonic crystalcavity with periodic holes of substantially the same size, according toan embodiment of the present invention.

FIG. 6 illustrates a fourth coupling scheme with a lateral cavityfeature where the silicon waveguide includes a circular grating ofalternating layers of two materials, with one material having a lowerrefractive index than the other, according to an embodiment of thepresent invention.

FIG. 7 a illustrates a coupling scheme with a vertical cavity featurewhere an emission region of a vertical-cavity, surface emitting lasergenerates light that is coupled in a vertical plane relative to thesurface of the silicon waveguide, according to an embodiment of thepresent invention.

FIG. 7 b illustrates a coupling scheme with a vertical cavity featurewhere the emission region of the vertical-cavity, surface emitting lasergenerates light that is coupled laterally in an in-plane direction ofthe silicon waveguide, according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Within the description, the same reference numerals or signs have beenused to denote the same parts or the like.

Referring to FIG. 1, a semiconductor device 1 is shown, according to anembodiment of a first aspect of the present invention, having at leastan optically passive aspect ore device region 2 that, when semiconductordevice 1 is in use, is operable in substantially an optically passivemode for the transmission and/or coupling of light from a given locationto a desired location, rather than for the generation, amplification,detection and/or modulation of light. Optically passive aspect 2 ispatterned to include at least a photonic structure 4 with at least apredefined structure 5. In a preferred embodiment of the presentinvention, optically passive aspect 2 includes at least an opticalwaveguide 3 and an optical cavity 4′. Optical cavity 4′ can be:implemented by way of a reflector and/or a resonator in an embodiment ofthe present invention and formed as a constituent feature of photonicstructure 4.

There is also provided at least an optically active material 6 includingat least a material that is operable in substantially an opticallyactive mode. Regarding optically active material 6, it is chosen to besuitable for light generation, amplification, detection, and/ormodulation. By optically active, it is meant that optically activematerial 6 has a characteristic facilitating light emission, opticalgain and/or a relatively high non-linearity, making it suitable for thefabrication of modulators, or having relatively high absorptionproperties for the fabrication of detectors. Optically active material 6is formed in predefined structure 5, and in this way, it is opticallycoupled and substantially self-aligned in at least a lateral plane withoptically passive aspect 2, particularly the features thereof, such asoptical waveguide 3.

In an embodiment of the present invention, the optically active materialis grown in a predefined structure of the photonic structure patternedin the optically passive aspect. In this way, the optically activematerial is substantially self-aligned in a lateral plane and opticallycoupled with respect to the optically passive aspect. The alignment ofthe optically active material with respect to the optically passiveaspect and/or features thereof can be done without the need fordedicated alignment steps and/or equipment. Since the optically activematerial is formed in the predefined structure, which is a structuralfeature provided in respect of, and as inherent to, the photonicstructure, a precision with which the optically active material isplaced relative to the optically passive aspect and/or features thereofcan depend on a respective etch process or mask accuracy that is used inpatterning the optically passive aspect with the photonic structure andthe features thereof. Thus, the optically active material can belaterally aligned with respect to the optically passive aspect with anaccuracy of down to a few nanometres, for example, 5 nm, without theneed for labour-intensive, time-consuming and expensive equipment suchas electron-beam lithography whilst also being suitable formass-fabrication. In an embodiment of the present invention, thephotonic structure including the predefined structure is fabricatedfirst and then the optically active material is formed in the predefinedstructure. Thus, the fabrication step by way of which the photonicstructure is provided can be considered to perform a dual function. Thebasis of the dual function is the predefined structure of the photonicstructure: firstly, it provides a growth location for the opticallyactive material in order to facilitate optical coupling between theoptically active material and the optically passive aspect and,secondly, it facilitates the self-alignment feature of an embodiment ofthe present invention. The optically passive aspect can also be denotedas an optically passive region of the semiconductor device.

Preferably, the optically active material is substantially selectivelyformed in the predefined structure. In an embodiment of the presentinvention, the optically active material is formed in the predefinedstructure, a structural feature that is provided in respect of, andinherent to, the photonic structure of an embodiment of the presentinvention. This feature can be considered to extend the advantage offacilitating monolithic integration of the optically active materialwith respect to the optically passive aspect with relative ease ofimplementation compared to previously-proposed techniques.

Alternatively, and desirably, the optically active material is formedrelative to the optically passive aspect so as to exceed an area of thepredefined structure. This feature can provide the advantage of ease offormation of the optically active material since it need not be formedprecisely in and/or with respect to the predefined structure. In thisregard, and preferably, the excess optically active material is removedso that the optically active material is provided in the predefinedstructure. The excess optically active material is desirably removed bywet-chemical etching or chemical mechanical polishing.

Preferably, a structural characteristic of the predefined structure ischosen thereby to facilitate the optically active material to besubstantially self-aligned with respect to the optically passive aspect.By making an appropriate selection of one or more structuralcharacteristics of the predefined structure such as a width, heightand/or a shape thereof, the self-alignment feature of an embodiment ofthe present invention can be further improved and/or provided to suit,for example, an application of an embodiment of the present invention.Furthermore, any lattice mismatch between the respectivematerials/material systems used for the optically active material andthe optically passive aspect can be addressed by way of such aselection.

Desirably, the predefined structure is a trench, a hole or a combinationthereof. The predefined structure is a structural feature provided inrespect of the photonic structure, and in an embodiment of the presentinvention is chosen to be a trench, a hole or a combination thereof.Since such features can be provided with relative ease and/or precisionregarding location and/or structural characteristics, they extend to anembodiment of the present invention, the advantages of ease ofimplementation of the self-alignment feature and versatility since theshapes and/or sizes thereof can be adapted to target specific devices,typically in the range of 10 nanometres to 10 micrometres.

Preferably, the predefined structure is provided in a given location ofthe optically passive aspect. In respect of the self-alignment andoptical coupling of the optically active material with the opticallypassive aspect, the optically active material is formed locally in thepredefined structure provided in the photonic structure rather than overthe whole surface of the optically passive aspect. For example, thepredefined structure can be formed in the photonic structure where theintegration of the laser/light source, by way of the optically activematerial, is anticipated. This feature of an embodiment of the presentinvention can extend the advantages of ease of design, fabrication andimplementation of an embodiment of the present invention since theoptically active material is provided relative to the optically passiveaspect as desired rather than being provided generally, the latternecessitating further processing steps for the removal of the opticallyactive material from those regions other than the predefined structure.

Desirably, the optically active material is operable to perform lightgeneration, detection, modulation, or a combination thereof. Thisfeature can facilitate increased versatility and application of anembodiment of the present invention to different optical systems.

Preferably, the optically active material includes at least one of: aIII-V material system, a II-VI material system, a silicon nanoparticle,a silicon quantum dot, germanium and heterostructures thereof includingat least one of gallium arsenide, gallium antimonide, gallium nitride,indium phosphide, indium aluminium arsenide, indium arsenic phosphide,indium gallium phosphide, gallium phosphide, indium gallium arsenide,indium gallium arsenic phosphide, and an organic material system.Desirably, the optically active material includes a crystalline,polycrystalline, or amorphous material. An embodiment of the presentinvention is not limited to the use of a specific material/materialsystem for the optically active material and, in fact, different and abroad range of materials can be used therefor, which feature can providethe advantages of increased versatility in terms of devices and/oroptical systems/applications in which an embodiment of the presentinvention can be used. Appropriate material stacks and/or quantum dotsare encompassed within the scope of the present invention for theoptically active material.

Preferably, the optically passive aspect includes a multilayer structureprovided on a seed layer. In a preferred embodiment of the presentinvention, the multilayer structure includes a silicon layer arranged onan insulator layer and the seed layer includes bulk silicon. Otherappropriate material stacks are also encompassed within the scope of thepresent invention for the optically passive aspect.

Desirably, the optically passive aspect includes at least one of:silicon, a III-V compound semiconductor, germanium, gallium arsenide,gallium antimonide, gallium nitride, indium phosphide, indium aluminiumarsenide, indium arsenic phosphide, indium gallium phosphide, galliumphosphide, indium gallium arsenide, indium gallium arsenic phosphide,aluminium oxide, tantalum pent-oxide, hafnium dioxide, titanium dioxide,silicon dioxide, silicon nitride, and silicon oxi-nitride. An embodimentof the present invention is not limited to the use of a specificmaterial/materials for the optically passive aspect and, in fact,different and a broad range of materials can be used therefor, whichfeature can provide the advantages of increased versatility in terms ofdevices and/or optical systems/applications in which an embodiment ofthe present invention can be used.

Preferably, the optically passive aspect includes an optical waveguideand an optical cavity. According to an embodiment of the presentinvention, the optically passive aspect can include an optical waveguidefor the transmission and/or coupling of light from the predefinedstructure to a desired location and a cavity for the formation of alaser so as to allow the photons generated by the optically activematerial to travel the gain medium, thereby generating stimulatedemission.

Desirably, an embodiment of the present invention includes avertical-cavity surface-emitting laser implemented by way of alternatinglayers of the optically active material. This feature includes acoupling scheme for optically coupling the optically active materialwith the optically passive aspect by way of a vertical cavity feature.Specifically, a vertical cavity surface-emitting laser is proposedhaving alternating layers of optically active material that form thedielectric Bragg reflectors. An advantage of this feature can be thatthe coupling properties can be tuned as desired by variation of themirror reflectivity, that is, by using more or fewer of the alternatinglayers of the optically active material. A further advantage of thisfeature can be ease of integration/implementation of an embodiment ofthe present invention in optical systems/applications where spaceeconomy in a lateral plane is desired. In this regard, and preferably,an emission region of the vertical-cavity surface-emitting laser ispositioned relative to the optically passive aspect such that lightgenerated by the vertical-cavity surface-emitting laser is coupledsubstantially in at least one of: a vertical plane relative to a surfaceof the optically passive aspect and laterally in an in-plane directionof the optically passive aspect. By way of this feature, light can becoupled from the vertical-cavity surface emitting laser in a desiredplane or planes relative to the optically passive aspect and, thus, canextend the advantage of broadening a range of applications/opticalsystems in which an embodiment of the present invention can be used.

Desirably, a cross-section of the optically passive aspect in alongitudinal plane is smaller than a corresponding cross-section of thepredefined structure, thereby facilitating light generated by theoptically active material to be substantially coupled to the opticallypassive aspect. This feature is provided in relation to a first couplingscheme for optically coupling the optically active material with theoptically passive aspect by way of a lateral cavity feature. Because thecross-section of the optically passive aspect in the longitudinal planeis chosen to be smaller than a corresponding cross-section of thepredefined structure, light generated by the optically active materialis better confined within the optically passive aspect. Thus, thisfeature can extend the advantages of improved optical couplingefficiency and improved device performance to an embodiment of thepresent invention. With respect to the afore-described feature,preferably, the optically passive aspect includes a tapered regionbetween the smaller cross-section thereof and the predefined structure.The taper feature can be used to the advantage, to match the respectivemodal sizes of a light source based on the optically active material andthe optically passive aspect, for example, where the light source is aIII-V material system and the optically passive aspect includes asilicon optical waveguide. In this way, a modal gain of an embodiment ofthe present invention can be further improved.

Desirably, in an alternative embodiment of the present invention, across-section of the optically passive aspect in a longitudinal plane issubstantially of the same size as the corresponding cross-section of thepredefined structure. Fewer processing resources are needed to fabricatean embodiment of the present invention where the cross-section of theoptically passive aspect and the predefined structure are substantiallythe same. Thus, this feature can extend the advantage of ease offabrication and/or implementation to an embodiment of the presentinvention.

Preferably, and in relation to the first coupling scheme for opticallycoupling the optically active material and the optically passive aspectwith a lateral cavity feature, the optically passive aspect includes awire waveguide. This feature can extend the advantages of ease offabrication and/or integration since wire waveguides, particularly,silicon wire waveguides, can be fabricated with well-establishedcomplementary metal-oxide semiconductor (CMOS) processes.

In an alternative implementation of the lateral cavity feature, there isprovided a second coupling scheme for optically coupling the opticallyactive material with the optically passive aspect having aone-dimensional photonic crystal cavity in which periodic holes areformed in an in-plane direction of the photonic structure and in aregion thereof where light generated by the optically active material issubstantially coupled to the optically passive aspect. Because a modalvolume and/or the quality factor of a lateral cavity implemented as aone-dimensional photonic crystal cavity can be better controlled,corresponding advantages are extended, by way of the afore-describedfeature, to an embodiment of the present invention. In a firstimplementation of the one-dimensional photonic crystal cavity, it can beformed as un-chirped and un-tapered in the optically passive aspect. Inthis case, the optically passive aspect can be implemented as having asmaller cross-section in the longitudinal plane than the predefinedstructure of an embodiment of the present invention with the opticallypassive aspect being linked to the predefined structure by a taperedwidth. Advantages associated with the aforementioned firstimplementation include: ease of implementation, better confinement oflight in the optically passive aspect and facilitating matching of therespective modes of the optically active material and theone-dimensional photonic crystal cavity. In a second implementation ofthe one-dimensional photonic crystal cavity, the optically passiveaspect has a cross-section in a longitudinal plane that is substantiallyof the same size as the corresponding cross-section of the predefinedstructure. Such a second implementation can provide the advantage thatfewer processing resources can be facilitated to produce such astructure since the optically passive aspect and the predefinedstructure have substantially the same size in the longitudinal plane.

In an alternative implementation of the lateral cavity feature, there isprovided a third coupling scheme for optically coupling the opticallyactive material with the optically passive aspect having atwo-dimensional photonic crystal cavity in which periodic holes areformed in two in-plane directions of the photonic structure. Even bettercontrol of a modal volume and/or the quality factor in both in-planedirections can be achieved with a lateral cavity implemented as atwo-dimensional photonic crystal cavity and so corresponding advantagesare extended to an embodiment of the present invention. In this regard,desirably, there is provided a photonic crystal waveguide configured tocouple the light generated by the optically active material to a desiredlocation, which feature can provide improved optical coupling of lightgenerated by the optically active material to a desired location and sofacilitate improved device performance of an embodiment of the presentinvention.

In relation to an embodiment of the present invention having aone-dimensional photonic cavity or a two-dimensional photonic cavity,preferably, the periodic holes are substantially of the same-size. Thisfeature has the associated advantage of ease of fabrication and/orimplementation and so imparts such corresponding advantages to anembodiment of the present invention.

In relation to an embodiment of the present invention having aone-dimensional photonic cavity, a hole-size of at least some of theperiodic holes is desirably tapered to progressively increase to a givensize in a direction away from the predefined structure. This feature canfacilitate mode-shaping of the cavity mode and higher quality factorvalues.

In an alternative implementation of the lateral cavity feature, there isprovided a fourth coupling scheme for optically coupling the opticallyactive material with the optically passive aspect in which an embodimentof the present invention further includes a circular grating ofalternating layers of two materials, one of the materials having a lowerrefractive index than the other of the two materials, the predefinedstructure being located within a defect in the circular grating. Such alateral cavity design can offer azimuthal symmetry resulting in aband-gap for substantially all in-plane k-vectors. Furthermore, such acavity design can facilitate higher quality factor values to beachieved, for example, 10⁶.

According to an embodiment of the present invention, predefinedstructure 5 is a photonic cavity in photonic structure 4. It ispreferably a trench, hole, or a combination thereof. At least astructural characteristic of predefined structure 5, such as a width,height, and/or a shape thereof, can be selected to facilitate a desiredtuning of the self-alignment of optically active material 6 with respectto optically passive aspect 2. In a preferred embodiment of the presentinvention, the aspect ratio of predefined structure 5, that is, theratio of its height to its width/diameter, is chosen to be greater than1 and, more preferably, greater than 3. In an embodiment of the presentinvention, the aspect ratio is broadly chosen so as to facilitate aspectratio trapping of the defects that are due to the lattice mismatchbetween the respective materials/material systems used for opticallyactive material 6 and optically passive aspect 2. In a preferredembodiment of the present invention, the height of predefined structure5 is chosen to be 1000 nm and its width/diameter is chosen to be 250 nm.An embodiment of the present invention is, of course, not limited to thegiven examples of the aspect ratio, height and/or width dimensions forpredefined structure 5, and in fact any other sizes falling within thescope of the present invention can be used.

According to an embodiment of the present invention, predefinedstructure 5 is provided in a given location of optically passive aspect2. In respect of the self-alignment and optical coupling of opticallyactive material 6 with optically passive aspect 2, the optically activematerial is formed locally in predefined structure 5 provided inphotonic structure 4 rather than over the whole surface of opticallypassive aspect 2. In this regard, predefined structure 5 is formed inphotonic structure 4 where the integration of the laser/light source, byway of optically active material 6, is anticipated.

According to an embodiment of the present invention, predefinedstructure 5 can be an aperture having an insulating material or ablocking p-n junction. The insulating material is formed on the outerwalls of predefined structure 5 and can be selected from one of:silicon, germanium, gallium arsenide, gallium antimonide, galliumnitride, indium phosphide, indium aluminium arsenide, indium arsenicphosphide, indium gallium phosphide, gallium phosphide, indium galliumarsenide, indium gallium arsenic phosphide, aluminium oxide, tantalumpent-oxide, hafnium dioxide, titanium dioxide, silicon dioxide, siliconnitride, and silicon oxi-nitride. Of course, an embodiment of thepresent invention is not limited to the use of such materials and anyother suitable materials for the blocking p-n junction or the insulatingmaterial for the predefined structure 5 are encompassed within the scopeof the present invention.

Regarding the formation of optically active material 6 in predefinedstructure 5, two methods are proposed in an embodiment of the presentinvention. In one method, selective epitaxial growth is done in whichoptically active material 6 is substantially selectively formed inpredefined structure 5. In another method, height selective epitaxialgrowth of optically active material 6 is done in which it is formedrelative to a surface of optically passive aspect 2 in which predefinedstructure 5 is formed so as to exceed at least an area of predefinedstructure 5. Thus, optically active material 6 is formed relative tooptically passive aspect 2 so as to at least be formed in and aroundpredefined structure 5. Excess optically active material 6, which can beany of optically active material 6 around predefined structure 5 and/oron optically passive aspect 2, is removed so that optically activematerial 6 is provided in predefined structure 5. Removal of excessoptically active material 6 can be done by wet-chemical etching,chemical mechanical polishing, or any other suitable method for thispurpose.

According to an embodiment of the present invention, for opticallyactive material 6, a wide and diverse range of materials and/or materialsystems can be used, for example, a III-V material system, a II-VImaterial system, at least a silicon nanoparticle, at least a siliconquantum dot, germanium, and heterostructures thereof having at least oneof gallium arsenide, gallium antimonide, gallium nitride, indiumphosphide, indium aluminium arsenide, indium arsenic phosphide, indiumgallium phosphide, gallium phosphide, indium gallium arsenide, indiumgallium arsenic phosphide, and an organic material system. Regarding theorganic material system, laser dyes and/or other relatively highlynon-linear polymers are encompassed within the scope of the presentinvention. In this regard, those polymers with a relatively lowoscillator strength and large exciton radius can exhibit a relativelyhigh non-linearity and so are considered to be encompassed within thescope of the present invention. For the optically active material 6, acrystalline material such as crystalline silicon, polycrystallinematerial such as polycrystalline silicon or amorphous material such asamorphous silicon, amorphous barium titanate, can be used in anembodiment of the present invention. The aforementionedmaterials/material systems have been given by way of example. Anembodiment of the present invention is not limited to the use thereofand any other materials/material systems that can fall within the scopeof the present invention for optically active material 6 are consideredto be included within the ambit of the present invention. Generally, foroptically active material 6, those materials/material systems having aband-gap characteristic such that they exhibit a relatively highnon-linearity, that is, a relatively high optical gain and highabsorption, suited for a given application defined by a given targetwavelength, can be used in an embodiment of the present invention.

Referring again to FIG. 1, optically passive aspect 2 can be implementedso as to include a multilayer structure 3′, 3″ provided on at least aseed layer 7. In a preferred embodiment of the present invention, themultilayer structure includes at least a topmost silicon layer 3′arranged on an underlying insulator layer 3″ and seed layer 7 includesbulk silicon. Optical waveguide aspect 3 of optically passive aspect 2is patterned substantially in topmost silicon layer 3′ of multilayerstructure 3′, 3″. By forming optically active material 6 in predefinedstructure 5, optically active material 6 is substantially self-alignedlaterally with optically passive aspect 2, particularly opticalwaveguide 3, as can be clearly seen from FIG. 1.

According to an embodiment of the present invention, optically activematerial 6 can be selected so as to have an emission wavelength that issubstantially matched with a transmission range of optically passiveaspect 2, and particularly of optical waveguide 3. By way of example, ifoptical waveguide 3 includes a silicon waveguide, optically activematerial 6 can be selected so as to have a transmission range largerthan 1100 nm. In this regard, such a wavelength range can be obtainedfor optically active material 6 being: InAs quantum dots capped withGaAs; (In, Ga)As, (In, Ga)(As, N) or (In, Ga)(As, N, Sb), (In, Ga)(As N)quantum wells; InGaAsP quantum wells; InAsP quantum wells; NAsP or otherIII-V compound materials.

Referring to FIGS. 2 a-2 c, the fabrication stages of an embodimentaccording to the first aspect of the present invention are illustrated.As can be seen from FIG. 2 a, photonic structure 4 having periodic holes4′ is formed in optically passive aspect 2. Periodic holes 4′ caninclude a material of lower refractive index than that used for photonicstructure 4, such as air. Photonic structure 4 is also formed so as toinclude a predefined structure 5, which, in the present example, isshown as a hole 5 of larger diameter than periodic holes 4′. In thepresent example, optically passive aspect 2 includes a multilayerstructure 3′, 3″ provided on a seed layer 7 with the multilayerstructure having a topmost silicon layer 3′ provided on an underlyinginsulator/buried oxide layer 3″ and seed layer 7 being bulk silicon asdescribed above with reference to FIG. 1. Photonic structure 4 is formedin multilayer structure 3′, 3″ such that periodic holes 4′ are formed intopmost silicon layer 3′ giving access to underlying insulator/buriedoxide layer 3″. Then, and as illustrated by FIG. 2 b, a lithographystep, such as etching, is performed at the location of predefinedstructure 5 so as to open insulator/buried oxide layer 3″ and to giveaccess to seed layer 7, such selective etching being performed bycovering substantially all but predefined structure 5 of opticallypassive aspect 2 with photoresist, for example. In this regard, thealignment tolerances are relatively non-stringent due to the selectivityof the etching process not attacking the silicon 3′, 7 butinsulator/buried oxide layer 3″. As illustrated by FIG. 2 c, opticallyactive material 6, which in the present example is based on a III-Vmaterial system, is selectively grown in predefined structure/oxideaperture 5. Alternatively, and with respect to FIG. 2 c, opticallyactive material 6 can also be grown on a larger area on the surface ofoptically passive aspect 2 in which predefined structure 5 is formed andthen excessive optically active material 6 is removed from everywherebut predefined structure 5 using lithography and the non-stringentalignment tolerances, as mentioned above.

Generally, and with regard to an embodiment of the present invention,the light source can only be located in optically active material 6 andexhibits optically or electrically pumped emission. While silicon doesnot exhibit sufficient photoluminescence efficiency due to its indirectband-gap, it offers relatively low-propagation loss and dispersion.Furthermore, it can be fabricated with well-established CMOS processes,which makes it attractive for use as wave-guiding material that can beintegrated with ease and fabricated in a cost-effective manner. Thus, ina preferred embodiment, optically active material 6 is based on a III-Vbased material system and optical waveguide 3 is implemented by way of asilicon waveguide. In this regard, light generated by optically activematerial 6 has to be transferred to silicon waveguide 3, which is doneby different coupling schemes that are described below.

Referring to FIGS. 3 a and 3 b, a first coupling scheme with a lateralcavity feature according to an embodiment of the present invention isillustrated. As shown in FIG. 3 a, a cross-section of silicon waveguide3 in a longitudinal plane is smaller than a corresponding cross-sectionof predefined structure 5, which is shown as hole-shaped in the presentexample. This feature facilitates light generated by III-V based lightsource 6 to be substantially coupled to and better confined withinsilicon waveguide 3. In a modification made to an embodiment of thepresent invention as shown in FIG. 3 b, a tapered region 8 is providedbetween the smaller cross-section of silicon waveguide 3 and predefinedstructure 5. Taper feature 8 can be used to advantage to match therespective modal sizes of the III-V based light source and siliconwaveguide 3, which adiabatically taper the modal size of the light.

Referring to FIGS. 4 a-4 e, a second coupling scheme with a lateralcavity feature for optically coupling III-V based light source 6 tosilicon waveguide 3 is illustrated. The second coupling scheme is basedon photonic structure 4 having at least a one-dimensional photoniccrystal cavity 10 in which periodic holes 4′ are formed in an in-planedirection of photonic structure 4 and in a region thereof where lightgenerated by III-V based light source 6 is substantially coupled to thesilicon waveguide 3. The use of relatively high-reflective materialssuch as silicon and III-V materials facilitates vertical and in-planeconfinement by way of index-guiding. The second coupling schemeaccording to an embodiment of the present invention is not limited tothe formation of one-dimensional photonic cavity 10 in silicon waveguide3 as shown in any one of FIGS. 4 a-4 e. Indeed, mixed cavities withperiodic holes/reflectors 4′ being partially located in the III-Vmaterial system on which light source 6 is based and in the siliconforming the basis of waveguide 3 are also considered as encompassedwithin the scope of the present invention.

As can be clearly seen, FIG. 4 a and corresponding FIG. 4 b pertain towhen predefined structure 5 is implemented as a trench and FIG. 4 c andcorresponding FIG. 4 d relate to where predefined structure 5 isimplemented as a hole. In FIGS. 4 a-4 d, it can be seen that siliconwaveguide 3 is implemented as having a smaller cross-section in thelongitudinal plane as compared to the corresponding dimension ofpredefined structure 5 and it has a tapered width 8 where it is linkedto predefined structure 5. In FIGS. 4 a and 4 c, periodic holes 4′ aresubstantially of the same size. Advantages associated with theembodiments of the present invention as shown in FIGS. 4 a and 4 cinclude: ease of implementation since periodic holes 4′ aresubstantially of the same size, better confinement of light in siliconwaveguide 3 since it has a smaller cross-section in the longitudinalplane than predefined structure 5 and facilitating matching of therespective modes of III-V based light source 6 and one-dimensionalphotonic crystal cavity 10 by way of tapered region 8 of siliconwaveguide 3. In contrast to FIGS. 4 a and 4 c, according to anembodiment of the present invention as shown in FIGS. 4 b and 4 d,periodic holes 4′ are implemented as progressively increasing to a givensize in a direction away from predefined structure 5, where the givensize can be substantially compatible to a width of silicon waveguide 3in the longitudinal plane, for example. Such an implementation has, inaddition to the advantages described above with reference to FIGS. 4 aand 4 c, the advantage that the tapered holes facilitate mode-shaping ofthe cavity mode and higher quality-factor values.

FIG. 4 e shows a second implementation of one-dimensional photoniccrystal cavity 10 in which the silicon waveguide 3 has a cross-sectionin a longitudinal plane that is substantially of the same size as thecorresponding cross-section of predefined structure 5. Such a secondimplementation can provide the advantage that fewer processing resourcescan be facilitated to produce such a structure since silicon waveguide 3and predefined structure 5 have substantially the same size in thelongitudinal plane. Since periodic holes 4′ of photonic structure 4 areimplemented as progressively increasing to a given size in a directionaway from predefined structure 5, an embodiment of the present inventionas shown in FIG. 4 e, can provide the further advantage of mode-shapingof the cavity mode and higher quality-factor values.

In an alternative implementation of the lateral cavity feature and asshown in FIG. 5, there is provided a third coupling scheme for opticallycoupling III-V based light source 6 with silicon waveguide 3 in whichphotonic structure 4 includes at a two-dimensional photonic crystalcavity 20 in which periodic holes 4′ of substantially the same size areformed in two in-plane directions of photonic structure 4. In thisregard, within two-dimensional photonic crystal cavity 20, a defect isformed, corresponding to where III-V based light source 6 isimplemented, by the III-V material being formed in predefined structure5. Light generated by III-V based light source 6 is confined within thedefect; it is coupled to a desired location by way of a photonic crystalwaveguide 21.

In an alternative implementation of the lateral cavity feature as shownin FIG. 6, there is provided a fourth coupling scheme for opticallycoupling III-V based light source 6 with silicon waveguide 3. As shownin one example of the fourth coupling scheme, silicon waveguide 3includes at least a circular grating 30 of alternating layers 30′, 30″of at least two materials, one of the materials having a lowerrefractive index than the other of the two materials, predefinedstructure 5 being located within a defect in circular grating 30.According to an embodiment of the present invention as shown in FIG. 6,cavity mirrors 30′, 30″ can be entirely formed in silicon/wave-guidingmaterial 3 with the III-V material having the defect. Cavity mirrors30′, 30″ can be formed with alternating layers of dielectric and/ornon-III-V material systems, for example, silicon dioxide. Thesurrounding refractive index of silicon is about 3.48, whereas thedefect preferably has a lower refractive index, most preferably lowerthan 3.4. Furthermore, silicon waveguide 3 includes a tapered region 8that can facilitate matching of the respective cavity modes and thewaveguide mode.

Referring to FIGS. 7 a and 7 b, a coupling scheme for optically couplingIII-V based light source 6 to silicon waveguide 3 based on a verticalcavity feature 40 is illustrated. According to an embodiment of thepresent invention, vertical cavity feature 40 is implemented by way of avertical-cavity, light-emitting structure such as a vertical-cavity,surface-emitting laser. Vertical-cavity, surface-emitting laser 40 isimplemented by way of alternating layers 40′, 40″ of the III-V material,which form dielectric Bragg reflectors/mirrors 41. Stacked multiplelayers 40′, 40″ have alternating refractive indices and typically alsodiffer in their band-gap, thus facilitating a Bragg reflector 41 havingclose to unity reflection. This facilitates relatively low-threshold,high-power vertically-emitting lasers and/or light-emitting diodes to beproduced in an embodiment of the present invention.

FIG. 7 a shows an embodiment of the present invention where an emissionregion 42 of vertical-cavity, surface-emitting laser 40 is such that thelight it generates is coupled in substantially a vertical plane relativeto a surface of silicon waveguide 3. In this regard, and viewing FIG. 7a in conjunction with FIG. 1, vertical-cavity, surface-emitting laser 40is formed on topmost silicon layer 3′ of multilayer structure 3′, 3″ ofoptically passive aspect 2.

FIG. 7 b shows an embodiment of the present invention in which at leastan emission region 42 of the vertical-cavity, surface-emitting laser issuch that the light it generates is coupled substantially laterally inan in-plane direction of silicon waveguide 3. In this regard, andviewing FIG. 7 b in conjunction with FIG. 1, vertical-cavity,surface-emitting laser 40 is formed on seed/bulk silicon layer 7. Anadvantage associated with an embodiment of the present invention asshown in FIG. 7 b is that a top and bottom mirrors 41′ are facilitated.In contrast, only a top mirror 41′ is facilitated in an embodiment ofthe present invention as shown in FIG. 7 a.

The respective vertical cavity designs shown in FIGS. 7 a and 7 b can beimplemented in isolation or in combination with any one of the lateralcavity features described above with reference to FIGS. 3-6.Furthermore, the mirrors/reflectors in FIGS. 7 a and 7 b can beimplemented by way of high contrast gratings rather than dielectricBragg mirrors, which can facilitate more compact structures to befacilitated. The growth position of III-V material/optically activematerial 6 is determined by the position of predefined structure 5,which defines the access point of the gaseous and molecular precursorsduring metal organic chemical vapour deposition and molecular beamepitaxial growth, respectively.

Regarding optically coupling III-V based light source 6 to siliconwaveguide 3, hybrid structures with III-V/silicon mixed resonatorsand/or three-dimensional cavities can be contemplated within the scopeof an embodiment of the present invention.

Embodiments of the present invention have been described purely by wayof example and modifications of detail can be made within the scope ofthe invention.

Each feature disclosed in the description, and where appropriate, theclaims and the drawings, can be provided independently or in anyappropriate combination.

What is claimed is:
 1. A method for fabricating a semiconductor devicefor use in an optical application, the method comprising: providing anoptically passive aspect that is operable in a substantially opticallypassive mode; providing an optically active material having a materialthat is operable in a substantially optically active mode; wherein theoptically passive aspect is patterned to include a photonic structurewith a predefined structure; and wherein the optically active materialis formed in the predefined structure so as to be substantiallyself-aligned in a lateral plane with the optically passive aspect. 2.The method according to claim 1, wherein the optically active materialis substantially selectively formed in the predefined structure.
 3. Themethod according to claim 1, wherein the optically active material isformed relative to the optically passive aspect so as to exceed an areaof the predefined structure.
 4. The method according to claim 3, whereinexcess optically active material is removed so that the optically activematerial is provided in the predefined structure.
 5. The methodaccording to claim 4, wherein the excess optically active material isremoved by wet-chemical etching or chemical mechanical polishing.
 6. Themethod according to claim 1, wherein a structural characteristic of thepredefined structure is chosen to facilitate the optically activematerial to be substantially self-aligned with respect to the opticallypassive aspect.
 7. The method according to claim 1, further comprising:providing a circular grating of alternating layers of two materials, oneof the materials having a lower refractive index than the other of thetwo materials, the predefined structure being located within a defect inthe circular grating.
 8. The method according to claim 1, wherein thepredefined structure is provided in a given location of the opticallypassive aspect.
 9. The method according to claim 1, wherein theoptically active material is operable to perform light generation,amplification, detection, modulation, or a combination thereof.
 10. Themethod according to claim 1, wherein the optically active materialcomprises at least one of: a III-V material system, a II-VI materialsystem, a silicon nanoparticle, a silicon quantum dot, germanium andheterostructures thereof comprising at least one of: gallium arsenide,gallium antimonide, gallium nitride, indium phosphide, indium aluminiumarsenide, indium arsenic phosphide, indium gallium phosphide, galliumphosphide, indium gallium arsenide, indium gallium arsenic phosphide,and an organic material system.
 11. The method according to claim 1,wherein the optically active material comprises a crystalline,polycrystalline, or amorphous material.
 12. The method according toclaim 1, wherein the optically passive aspect comprises a multilayerstructure provided on a seed layer.
 13. The method according to claim 1,wherein the optically passive aspect comprises at least one of: silicon,a III-V compound semiconductor, germanium, gallium arsenide, galliumantimonide, gallium nitride, indium phosphide, indium aluminiumarsenide, indium arsenic phosphide, indium gallium phosphide, galliumphosphide, indium gallium arsenide, indium gallium arsenic phosphide,aluminium oxide, tantalum pent-oxide, hafnium dioxide, titanium dioxide,silicon dioxide, silicon nitride, and silicon oxi-nitride.
 14. Themethod according to claim 1, wherein the optically passive aspectcomprises an optical waveguide and an optical cavity.
 15. The methodaccording to claim 1, further comprising: providing a vertical-cavitysurface-emitting laser implemented by way of alternating layers of theoptically active material.
 16. The method according to claim 15, whereinan emission region of the vertical-cavity surface-emitting laser ispositioned relative to the optically passive aspect such that lightgenerated by the vertical-cavity surface-emitting laser is coupledsubstantially in at least one of: a vertical plane relative to a surfaceof the optically passive aspect and laterally in an in-plane directionof the optically passive aspect.
 17. The method according to claim 1,wherein a cross-section of the optically passive aspect in alongitudinal plane is smaller than a corresponding cross-section of thepredefined structure, thereby facilitating light generated by theoptically active material to be substantially coupled to the opticallypassive aspect.
 18. The method according to claim 17, wherein theoptically passive aspect comprises a tapered region between the smallercross-section and the predefined structure.
 19. The method according toclaim 1, wherein a cross-section of the optically passive aspect in alongitudinal plane is substantially of the same size as thecorresponding cross-section of the predefined structure.
 20. The methodaccording to claim 1, wherein the optically passive aspect comprises awire waveguide.
 21. The method according to claim 18, furthercomprising: providing a one-dimensional photonic crystal cavity in whichperiodic holes are formed in an in-plane direction of the photonicstructure and in a region thereof where light generated by the opticallyactive material is substantially coupled to the optically passiveaspect.
 22. The method according to claim 16, further comprising:providing a two-dimensional photonic crystal cavity in which periodicholes are formed in two in-plane directions of the photonic structure.23. The method according to claim 22, further comprising: providing aphotonic crystal waveguide configured to couple the light generated bythe optically active material to a desired location.
 24. The methodaccording to claim 21, wherein the periodic holes are substantially ofthe same-size.
 25. The method according to claim 21, wherein a hole-sizeof at least some of the periodic holes is tapered to progressivelyincrease to a given size in a direction away from the predefinedstructure.